Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFQP47P06
Newark Part No.34C0498
Product RangeQFET Series
Technical Datasheet
985 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
Quantity | Price |
---|---|
1+ | $4.180 |
10+ | $4.150 |
25+ | $2.500 |
50+ | $2.400 |
100+ | $2.300 |
250+ | $2.290 |
500+ | $1.920 |
Price for:Each
Minimum: 1
Multiple: 1
$4.18
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP47P06
Newark Part No.34C0498
Product RangeQFET Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id47A
On Resistance Rds(on)0.026ohm
Drain Source On State Resistance0.026ohm
Transistor MountingThrough Hole
Power Dissipation Pd160W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220
Power Dissipation160W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product RangeQFET Series
MSL-
SVHCLead
Product Overview
The FQP47P06 is a -60V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
- Low gate charge (typical 84nC)
- Low Crss (typical 320pF)
- 100% avalanche tested
- ±25V gate to source voltage
- 62.5°C/W thermal resistance, junction to ambient
- 0.94°C/W thermal resistance, junction to case
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.026ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
47A
Drain Source On State Resistance
0.026ohm
Power Dissipation Pd
160W
Gate Source Threshold Voltage Max
4V
Power Dissipation
160W
Operating Temperature Max
175°C
Product Range
QFET Series
SVHC
Lead
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability