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MJD47T4G
Bipolar (BJT) Single Transistor, NPN, 250 V, 1 A, 1.56 W, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $0.288 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$720.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD47T4G
Newark Part No.26K4446
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo250V
Collector Emitter Voltage Max250V
Continuous Collector Current1A
Power Dissipation1.56W
Power Dissipation Pd1.56W
DC Collector Current1A
DC Current Gain hFE10hFE
Transistor MountingSurface Mount
Transistor Case StyleTO-252 (DPAK)
No. of Pins4Pins
Transition Frequency10MHz
DC Current Gain hFE Min10hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCLead
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
250V
Power Dissipation
1.56W
DC Collector Current
1A
Transistor Mounting
Surface Mount
No. of Pins
4Pins
DC Current Gain hFE Min
10hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
250V
Continuous Collector Current
1A
Power Dissipation Pd
1.56W
DC Current Gain hFE
10hFE
Transistor Case Style
TO-252 (DPAK)
Transition Frequency
10MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate