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MJL21196G
Bipolar (BJT) Single Transistor, NPN, 250 V, 16 A, 200 W, TO-264, Through Hole
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJL21196G
Newark Part No.82Y7003
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo250V
Collector Emitter Voltage Max250V
Continuous Collector Current16A
Power Dissipation Pd200W
Power Dissipation200W
Transistor Case StyleTO-264
DC Collector Current16A
Transistor MountingThrough Hole
DC Current Gain hFE8hFE
No. of Pins3Pins
Transition Frequency4MHz
DC Current Gain hFE Min8hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
250V
Power Dissipation Pd
200W
Transistor Case Style
TO-264
Transistor Mounting
Through Hole
No. of Pins
3Pins
DC Current Gain hFE Min
8hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
250V
Continuous Collector Current
16A
Power Dissipation
200W
DC Collector Current
16A
DC Current Gain hFE
8hFE
Transition Frequency
4MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate