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MMBFJ108
JFET Transistor, JFET, 25 V, 80 mA, 10 V, SOT-23, 3 Pin, 150 °C
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| Quantity | Price |
|---|---|
| 1+ | $0.167 |
| 25+ | $0.167 |
| 50+ | $0.167 |
| 100+ | $0.167 |
| 250+ | $0.167 |
| 500+ | $0.167 |
| 1000+ | $0.167 |
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Multiple: 1
$0.17
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBFJ108
Newark Part No.31Y2730
Technical Datasheet
Gate Source Breakdown Voltage Max-25V
Breakdown Voltage Vbr-25V
Zero Gate Voltage Drain Current Max80mA
Zero Gate Voltage Drain Current Idss Min80mA
Gate Source Cutoff Voltage Max-10V
Transistor Case StyleSOT-23
No. of Pins3 Pin
Transistor TypeJFET
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
MMBFJ108 is a N-channel JFET. This device is designed for digital switching applications where very low on resistance is mandatory.
- Sourced from process 58
- Drain-gate voltage is 25V at TA = 25°C
- Gate-source voltage is -25V at TA = 25°C
- Forward gate current is 10mA at TA = 25°C
- Operating and storage junction temperature range from -55 to 150°C
- Drain-source on resistance is 8ohm at VDS ≤ 0.1V, VGS = 0
- SSOT 3L package
- Operating junction and storage temperature range from -55 to +150°C
Technical Specifications
Gate Source Breakdown Voltage Max
-25V
Zero Gate Voltage Drain Current Max
80mA
Gate Source Cutoff Voltage Max
-10V
No. of Pins
3 Pin
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Breakdown Voltage Vbr
-25V
Zero Gate Voltage Drain Current Idss Min
80mA
Transistor Case Style
SOT-23
Transistor Type
JFET
Channel Type
N Channel
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate