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NDS0610
Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNDS0610
Newark Part No.58K2015
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id120mA
Drain Source On State Resistance10ohm
On Resistance Rds(on)10ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd360mW
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max1.7V
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
- Voltage controlled p-channel small signal switch
- High density cell design for low RDS (ON)
- High saturation current
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
10ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
360mW
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
120mA
On Resistance Rds(on)
10ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-23
Power Dissipation
360mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
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Product Compliance Certificate
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