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NDT456P
Power MOSFET, P Channel, 30 V, 7.5 A, 30 mohm, SOT-223, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.935 |
| 25+ | $0.935 |
| 50+ | $0.935 |
| 100+ | $0.935 |
| 250+ | $0.869 |
| 500+ | $0.779 |
| 1000+ | $0.705 |
| 2500+ | $0.690 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNDT456P
Newark Part No.58K9485
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7.5A
On Resistance Rds(on)0.026ohm
Drain Source On State Resistance30mohm
Transistor MountingSurface Mount
Power Dissipation Pd3W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Transistor Case StyleSOT-223
Power Dissipation3W
No. of Pins4Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
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Product Overview
The NDT456P is a P-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate-source voltage
Applications
Power Management, Motor Drive & Control
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.026ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-223
No. of Pins
4Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
7.5A
Drain Source On State Resistance
30mohm
Power Dissipation Pd
3W
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
3W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability