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NTR1P02T1G
Power MOSFET, P Channel, 20 V, 1 A, 0.18 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.122 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$366.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTR1P02T1G
Newark Part No.45J2173
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1A
On Resistance Rds(on)0.148ohm
Drain Source On State Resistance0.18ohm
Transistor MountingSurface Mount
Power Dissipation Pd400mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Transistor Case StyleSOT-23
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NTR1P02T1G is a P-channel Power MOSFET features ultra-low on-resistance provides higher efficiency and extends battery life.
Applications
Communications & Networking, Computers & Computer Peripherals
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.148ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
1A
Drain Source On State Resistance
0.18ohm
Power Dissipation Pd
400mW
Gate Source Threshold Voltage Max
1.9V
Power Dissipation
400mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate