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NVF3055L108T1G.
Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVF3055L108T1G.
Newark Part No.28AC0247
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id3A
Drain Source On State Resistance0.12ohm
On Resistance Rds(on)0.092ohm
Transistor MountingSurface Mount
Power Dissipation Pd2.1W
Rds(on) Test Voltage5V
Transistor Case StyleSOT-223
Gate Source Threshold Voltage Max1.68V
Power Dissipation2.1W
No. of Pins4Pins
Operating Temperature Max175°C
QualificationAEC-Q101
Product Range-
Automotive Qualification StandardAEC-Q101
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.12ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
5V
Gate Source Threshold Voltage Max
1.68V
No. of Pins
4Pins
Qualification
AEC-Q101
Automotive Qualification Standard
AEC-Q101
SVHC
Lead
Channel Type
N Channel
Continuous Drain Current Id
3A
On Resistance Rds(on)
0.092ohm
Power Dissipation Pd
2.1W
Transistor Case Style
SOT-223
Power Dissipation
2.1W
Operating Temperature Max
175°C
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate