Print Page
2N5240
Bipolar (BJT) Single Transistor, NPN, 300 V, 5 A, 100 W, TO-3, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerSOLID STATE
Manufacturer Part No2N5240
Newark Part No.67R1100
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo300V
Collector Emitter Voltage Max300V
Continuous Collector Current5A
Power Dissipation Pd100W
Power Dissipation100W
DC Collector Current5A
DC Current Gain hFE80hFE
Transistor MountingThrough Hole
Transistor Case StyleTO-3
No. of Pins2Pins
Transition Frequency2MHz
DC Current Gain hFE Min80hFE
Operating Temperature Max200°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N5240 is a 300V NPN silicon Power Transistor designed for use in high voltage, high speed, power switching regulators, converters, inverters and motor control system applications.
- 300V Minimum collector to emitter sustaining voltage (VCEO (sus))
- 2.5V Maximum collector to emitter saturation voltage (VCEO (sat))
- 2A Base current (IB)
- 375V Collector to base voltage
- 6V Emitter to base voltage
- 1.75°C/W Thermal resistance, junction to case
Applications
Power Management, Motor Drive & Control, Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
300V
Power Dissipation Pd
100W
DC Collector Current
5A
Transistor Mounting
Through Hole
No. of Pins
2Pins
DC Current Gain hFE Min
80hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
300V
Continuous Collector Current
5A
Power Dissipation
100W
DC Current Gain hFE
80hFE
Transistor Case Style
TO-3
Transition Frequency
2MHz
Operating Temperature Max
200°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability