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SI2301CDS-T1-GE3
Power MOSFET, P Channel, 20 V, 3.1 A, 0.142 ohm, TO-236, Surface Mount
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| Quantity | Price |
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| 1+ | $0.172 |
| 25+ | $0.172 |
| 50+ | $0.172 |
| 100+ | $0.172 |
| 250+ | $0.172 |
| 500+ | $0.172 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2301CDS-T1-GE3
Newark Part No.16P3701
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.1A
Drain Source On State Resistance0.142ohm
On Resistance Rds(on)0.142ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage2.5V
Power Dissipation Pd860mW
Transistor Case StyleTO-236
Gate Source Threshold Voltage Max400mV
Power Dissipation860mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2301CDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.142ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
860mW
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
3.1A
On Resistance Rds(on)
0.142ohm
Rds(on) Test Voltage
2.5V
Transistor Case Style
TO-236
Power Dissipation
860mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability