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SI2309DS-T1-GE3
Power MOSFET, P Channel, 60 V, 1.25 A, 0.275 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2309DS-T1-GE3
Newark Part No.84R8025
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.25A
On Resistance Rds(on)0.275ohm
Drain Source On State Resistance0.275ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.25W
Rds(on) Test Voltage10V
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max1V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.275ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
1.25A
Drain Source On State Resistance
0.275ohm
Power Dissipation Pd
1.25W
Transistor Case Style
SOT-23
Power Dissipation
1.25W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate