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SI2315BDS-T1-E3
Power MOSFET, P Channel, 12 V, 3 A, 0.05 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
| Quantity | Price |
|---|---|
| 500+ | $0.431 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$1,293.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2315BDS-T1-E3
Newark Part No.06J7577
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id3A
On Resistance Rds(on)0.04ohm
Drain Source On State Resistance0.05ohm
Transistor MountingSurface Mount
Power Dissipation Pd750mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Transistor Case StyleSOT-23
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2315BDS-T1-E3 is a P-channel TrenchFET® Power MOSFET with power dissipation at 750mW.
- ±8V Gate-source voltage
- Halogen-free
Applications
Industrial
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
12V
On Resistance Rds(on)
0.04ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
3A
Drain Source On State Resistance
0.05ohm
Power Dissipation Pd
750mW
Gate Source Threshold Voltage Max
900mV
Power Dissipation
750mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate