Print Page
SI2323CDS-T1-GE3
MOSFET Transistor, P Channel, -6 A, -20 V, 0.032 ohm, -4.5 V, -400 mV RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
36,369 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.753 |
| 10+ | $0.609 |
| 25+ | $0.579 |
| 50+ | $0.549 |
| 100+ | $0.519 |
| 500+ | $0.473 |
| 1000+ | $0.454 |
Price for:Each
Minimum: 1
Multiple: 1
$0.75
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2323CDS-T1-GE3
Newark Part No.97W2631
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6A
On Resistance Rds(on)0.032ohm
Drain Source On State Resistance0.039ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max400mV
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.032ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
6A
Drain Source On State Resistance
0.039ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability