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SI2369BDS-T1-GE3
MOSFET, P-CH, -30V, -7.5A, 2.5W ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSI2369BDS-T1-GE3
Newark Part No.04AJ4584
Product RangeTrenchFET Gen IV
Technical Datasheet
10,850 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.652 |
| 10+ | $0.501 |
| 25+ | $0.443 |
| 50+ | $0.386 |
| 100+ | $0.328 |
| 250+ | $0.304 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.26
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2369BDS-T1-GE3
Newark Part No.04AJ4584
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7.5A
On Resistance Rds(on)0.0225ohm
Drain Source On State Resistance0.027ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation2.5W
Power Dissipation Pd2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0225ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
No. of Pins
3Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
7.5A
Drain Source On State Resistance
0.027ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
Alternatives for SI2369BDS-T1-GE3
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
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Product Compliance Certificate
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