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SI2399DS-T1-GE3
Power MOSFET, P Channel, 20 V, 6 A, 0.034 ohm, SOT-23, Surface Mount
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| 1+ | $0.143 |
| 25+ | $0.143 |
| 100+ | $0.143 |
| 500+ | $0.143 |
| 1000+ | $0.143 |
| 2500+ | $0.143 |
| 10000+ | $0.143 |
| 25000+ | $0.143 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2399DS-T1-GE3
Newark Part No.64T4058
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6A
Drain Source On State Resistance0.034ohm
On Resistance Rds(on)0.028ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max600mV
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SI2399DS-T1-GE3
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Product Overview
The SI2399DS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch, PA switch and DC-to-DC converter applications.
- 100% Rg tested
- -55 to 150°C Operating temperature range
- Halogen-free
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.034ohm
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
600mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.028ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate