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SI3127DV-T1-GE3
Power MOSFET, P Channel, 60 V, 5.1 A, 0.074 ohm, TSOP, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI3127DV-T1-GE3
Newark Part No.75AH9200
Product RangeTrenchFET Series
Technical Datasheet
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| 10+ | $0.368 |
| 25+ | $0.347 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3127DV-T1-GE3
Newark Part No.75AH9200
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id5.1A
Drain Source On State Resistance0.074ohm
On Resistance Rds(on)0.074ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd4.2W
Power Dissipation4.2W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.074ohm
Transistor Case Style
TSOP
Rds(on) Test Voltage
10V
Power Dissipation Pd
4.2W
No. of Pins
6Pins
Product Range
TrenchFET Series
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
P Channel
Continuous Drain Current Id
5.1A
On Resistance Rds(on)
0.074ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
4.2W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate