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SI4459ADY-T1-GE3
MOSFET, P-CH, 30V, 29A, SOIC
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
150 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $2.990 |
| 25+ | $2.600 |
| 100+ | $2.170 |
| 500+ | $2.040 |
| 1000+ | $1.480 |
| 2500+ | $1.460 |
| 5000+ | $1.450 |
| 10000+ | $1.430 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.99
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4459ADY-T1-GE3
Newark Part No.23T8508
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id29A
Drain Source On State Resistance5000µohm
On Resistance Rds(on)0.0039ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd7.8W
Power Dissipation7.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
- 30V, 29A, P-channel TrenchFET® power MOSFET in 8 pin SOIC package
- 100 % Rg and UIS tested
- Suitable for adaptor switch and notebook
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
5000µohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
7.8W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
29A
On Resistance Rds(on)
0.0039ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
7.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate