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Quantity | Price |
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1+ | $0.446 |
10+ | $0.446 |
25+ | $0.446 |
50+ | $0.446 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7101DN-T1-GE3
Newark Part No.19X1961
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id35A
On Resistance Rds(on)0.0058ohm
Drain Source On State Resistance7200µohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd52W
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
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Product Overview
P-channel 30V (D-S) MOSFET for use in notebook adapter switch, notebook battery management and load switch.
- TrenchFET® power MOSFET
- 100% Rg tested
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0058ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation Pd
52W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
7200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate