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SI7137DP-T1-GE3
MOSFET Transistor, P Channel, -60 A, -20 V, 0.0016 ohm, -10 V, -1.4 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $2.990 |
| 10+ | $2.120 |
| 25+ | $1.900 |
| 50+ | $1.680 |
| 100+ | $1.460 |
| 500+ | $1.230 |
| 1000+ | $1.170 |
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Multiple: 1
$2.99
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7137DP-T1-GE3
Newark Part No.97W2691
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id60A
Drain Source On State Resistance0.00195ohm
On Resistance Rds(on)0.0016ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd104W
Gate Source Threshold Voltage Max1.4V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.00195ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.0016ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
104W
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability