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SI7157DP-T1-GE3
Power MOSFET, P Channel, 20 V, 60 A, 0.0016 ohm, PowerPAK SO, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.565 |
| 10+ | $0.565 |
| 25+ | $0.565 |
| 50+ | $0.565 |
| 100+ | $0.565 |
| 250+ | $0.565 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7157DP-T1-GE3
Newark Part No.29X6571
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id60A
On Resistance Rds(on)0.00125ohm
Drain Source On State Resistance0.0016ohm
Transistor MountingSurface Mount
Power Dissipation Pd104W
Rds(on) Test Voltage10V
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max1.4V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
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Product Overview
The SI7157DP-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, battery switch and load switch applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.00125ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.4V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.0016ohm
Power Dissipation Pd
104W
Transistor Case Style
PowerPAK SO
Power Dissipation
104W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability