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Available to Order
Manufacturer Standard Lead Time: 10 week(s)
Quantity | Price |
---|---|
3000+ | $0.522 |
6000+ | $0.511 |
12000+ | $0.507 |
18000+ | $0.504 |
30000+ | $0.501 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,566.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7465DP-T1-E3
Newark Part No.73W9417
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id3.2A
On Resistance Rds(on)0.051ohm
Drain Source On State Resistance0.064ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.5W
Rds(on) Test Voltage10V
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max3V
Power Dissipation1.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI7465DP-T1-E3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.051ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
3.2A
Drain Source On State Resistance
0.064ohm
Power Dissipation Pd
1.5W
Transistor Case Style
PowerPAK SO
Power Dissipation
1.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Alternatives for SI7465DP-T1-E3
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Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate