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SI7615ADN-T1-GE3
MOSFET, P-CH, 20V, 35A, 150DEG C, 52W
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| Quantity | Price |
|---|---|
| 1+ | $0.987 |
| 10+ | $0.729 |
| 25+ | $0.676 |
| 50+ | $0.624 |
| 100+ | $0.572 |
| 250+ | $0.528 |
| 500+ | $0.483 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$4.94
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7615ADN-T1-GE3
Newark Part No.63W4149
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id35A
On Resistance Rds(on)0.0035ohm
Drain Source On State Resistance4400µohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max400mV
Power Dissipation52W
Power Dissipation Pd52W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
- P-channel 20V (D-S) TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Used in adaptor switch, battery switch, load switch
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.0035ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
52W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
4400µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
Power Dissipation Pd
52W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability