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SI8483DB-T2-E1
Power MOSFET, P Channel, 12 V, 16 A, 0.026 ohm, MICRO FOOT, Surface Mount
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|---|---|
| 1+ | $0.063 |
| 10+ | $0.063 |
| 25+ | $0.063 |
| 50+ | $0.063 |
| 100+ | $0.063 |
| 250+ | $0.063 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI8483DB-T2-E1
Newark Part No.63W4156
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id16A
On Resistance Rds(on)0.022ohm
Drain Source On State Resistance0.026ohm
Transistor Case StyleMICRO FOOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
Power Dissipation Pd13W
Power Dissipation13W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
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Product Overview
P-channel 12V (D-S) MOSFET suitable for use in load switch for smart phones, tablet PCs and mobile computing.
- TrenchFET® power MOSFET
- Ultra-small outline
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
12V
On Resistance Rds(on)
0.022ohm
Transistor Case Style
MICRO FOOT
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
13W
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
16A
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
Power Dissipation
13W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate