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SQJ457EP-T1_GE3
Power MOSFET, P Channel, 60 V, 36 A, 0.021 ohm, PowerPAK SO, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSQJ457EP-T1_GE3
Newark Part No.75AH9218
Product RangeTrenchFET Series
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJ457EP-T1_GE3
Newark Part No.75AH9218
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id36A
Drain Source On State Resistance0.021ohm
On Resistance Rds(on)0.021ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation68W
Power Dissipation Pd68W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.021ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
68W
No. of Pins
8Pins
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
P Channel
Continuous Drain Current Id
36A
On Resistance Rds(on)
0.021ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
68W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate