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ManufacturerVISHAY
Manufacturer Part NoVS-FC420SA10
Newark Part No.80AH2791
Product RangeTrenchFET Series
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoVS-FC420SA10
Newark Part No.80AH2791
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id435A
Drain Source Voltage Vds100V
On Resistance Rds(on)0.0013ohm
Drain Source On State Resistance0.00215ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.8V
Power Dissipation Pd652W
Power Dissipation652W
Operating Temperature Max175°C
Product RangeTrenchFET Series
SVHCTo Be Advised
Product Overview
VS-FC420SA10 is a power module single switch power MOSFET.
- ID > 420A, TC = 25°C, TrenchFET® power MOSFET
- Low input capacitance (Ciss), reduced switching and conduction losses
- Ultra low gate charge (Qg), avalanche energy rated (UIS)
- UL approved file E78996
- Drain to source voltage is 100V max (TC = 25°C)
- Static drain to source on-resistance is 1.3mohm typ (VGS = 10V, ID = 200A, TJ = 25°C)
- Continuous drain current, VGS at 10V is 435A max (TC = 25°C)
- Insulation voltage (RMS) is 2500V max (any terminal to case, t = 1 min, TC = 25°C)
- Rise time is 275ns typ (VDD = 50V, TJ = 25°C), fall time is 172ns typ (VDD = 50V, TJ = 25°C)
- SOT-227 package, operating junction temperature range from -55 to +175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
435A
On Resistance Rds(on)
0.0013ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
652W
Operating Temperature Max
175°C
SVHC
To Be Advised
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.00215ohm
Gate Source Threshold Voltage Max
3.8V
Power Dissipation
652W
Product Range
TrenchFET Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate