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MJ14002G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 60 A, 300 W, TO-204AA, Through Hole
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Available to Order
Manufacturer Standard Lead Time: 13 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $18.900 |
| 10+ | $13.870 |
| 25+ | $13.400 |
| 50+ | $12.910 |
| 100+ | $12.420 |
Price for:Each
Minimum: 1
Multiple: 1
$18.90
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ14002G
Newark Part No.26K4509
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Collector Emitter Voltage V(br)ceo80V
Continuous Collector Current60A
Power Dissipation300W
Power Dissipation Pd300W
DC Collector Current60A
Transistor Case StyleTO-204AA
DC Current Gain hFE30hFE
Transistor MountingThrough Hole
No. of Pins2Pins
Transition Frequency-
DC Current Gain hFE Min30hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCLead
Product Overview
The MJ14002G is a 60A NPN bipolar Power Transistor designed for use in high power amplifier and switching circuit applications.
- Complementary device
- Low collector-emitter saturation voltage VCE(sat) = 2.5VDC maximum @ IC = 50A DC
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation
300W
DC Collector Current
60A
DC Current Gain hFE
30hFE
No. of Pins
2Pins
DC Current Gain hFE Min
30hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
80V
Continuous Collector Current
60A
Power Dissipation Pd
300W
Transistor Case Style
TO-204AA
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
200°C
Qualification
-
SVHC
Lead
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability