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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.01003ohm
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MOSFET Module Configuration
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Drain Source Voltage Vds
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$148.420 5+$142.280 10+$136.140 25+$130.000 50+$123.850 More Pricing... | Half Bridge | Dual N Channel | 154A | 900V | 0.01003ohm | Module | 18Pins | 15V | 2.74V | 328W | 175°C | ||||||
Each | 1+$148.420 5+$145.450 10+$142.490 | Half Bridge | Dual N Channel | 154A | 900V | 0.01003ohm | Module | 18Pins | 15V | 2.74V | 328W | 175°C | ||||||
