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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.0105ohm
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MOSFET Module Configuration
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$136.730 | Half Bridge | Dual N Channel | 114A | 1.2kV | 0.0105ohm | Module | 18Pins | 20V | 2.9V | 250W | 175°C | ||||||
Each | 1+$136.730 5+$130.650 10+$124.560 25+$118.470 50+$112.380 More Pricing... | Half Bridge | Dual N Channel | 114A | 1.2kV | 0.0105ohm | Module | 18Pins | 20V | 2.9V | 250W | 175°C | ||||||
