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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$12.170 10+$10.870 25+$9.560 50+$8.260 100+$7.790 More Pricing... | Single | - | N Channel | 6.2A | 1.7kV | - | 0.75ohm | TO-247 | 3Pins | 20V | 2.8V | - | 60W | 175°C | LSIC1MO170 Series | ||||||
Each | 1+$6.460 25+$6.340 | Single | N Channel | N Channel | 7A | 1.7kV | 0.75ohm | 0.75ohm | TO-247 | 3Pins | 20V | 3.25V | 68W | 68W | 175°C | - | ||||||
