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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=4800µohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$47.100 5+$41.940 10+$36.780 25+$36.600 50+$36.430 More Pricing... | Single | N Channel | 120A | 750V | 4800µohm | TO-247 | 4Pins | 2V | -3.7V | 714W | 175°C | EliteSiC Series | ||||||
Each | 1+$2,559.160 5+$2,507.980 10+$2,456.800 25+$2,405.620 | Half Bridge | N Channel | 500A | 3.3kV | 4800µohm | Module | 15Pins | 15V | 5.55V | 20mW | 175°C | XHP 2 Series | ||||||
