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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=8.6mohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$71.600 5+$66.330 10+$61.060 25+$55.790 50+$50.510 More Pricing... | Single | N Channel | N Channel | 120A | 1.2kV | 0.0086ohm | 8.6mohm | TO-247 | 4Pins | 12V | 4.7V | 789W | 789W | 175°C | ||||||
Each | 1+$35.190 5+$30.550 10+$25.910 25+$25.840 50+$25.780 More Pricing... | Single | - | N Channel | 106A | 750V | - | 8.6mohm | MO-299 | 8Pins | 12V | 5.5V | - | 600W | 175°C | ||||||
