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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=8000µohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
08AM4242 RoHS | Each | 1+$154.890 5+$151.790 10+$148.700 25+$145.590 | Half Bridge | N Channel | 191A | 1.2kV | 8000µohm | PIM | 36Pins | 18V | 4.4V | 556W | 150°C | - | |||||
51AM2050 RoHS | INFINEON | Each | 1+$282.200 5+$269.960 10+$257.720 25+$252.570 | Half Bridge | Dual N Channel | 195A | 2kV | 8000µohm | Module | 7Pins | 18V | 5.15V | - | 175°C | 62 mm C Series | ||||
