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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation Pd
=166.7W
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$12.440 10+$10.800 25+$9.170 50+$7.530 100+$6.940 More Pricing... | Single | N Channel | N Channel | 18.4A | 1.2kV | 0.15ohm | 150mohm | TO-247 | 3Pins | 12V | 4.4V | 166.7W | 166.7W | 175°C | ||||||
Each | 1+$14.800 10+$12.610 25+$10.420 50+$8.240 100+$7.600 More Pricing... | Single | N Channel | N Channel | 18.4A | 1.2kV | 0.15ohm | 150mohm | TO-247 | 4Pins | 12V | 4.4V | 166.7W | 166.7W | 175°C | ||||||
