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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
12AM9888 RoHS | STMICROELECTRONICS | Each | 1+$18.050 10+$13.720 25+$12.790 50+$11.860 100+$11.270 More Pricing... | Single | N Channel | 30A | 1.2kV | 0.087ohm | HiP247 | 4Pins | 18V | 4.2V | 236W | 200°C | ||||
14AM7987 RoHS | Each | 1+$15.680 10+$11.130 25+$10.770 50+$10.420 100+$10.060 More Pricing... | Single | N Channel | 30A | 1.2kV | 0.087ohm | HiP247 | 4Pins | 18V | 4.2V | 236W | 200°C | |||||
