Silicon Carbide (SiC) MOSFETs & Modules | Newark Electronics Mexico

Manufacturer Part No	Order Code	Manufacturer / Description	Price for	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
UF4C120053K3S	78AK8903 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 34 A 1.2 kV 53 mohm TO-247	Each	1+$16.810 10+$14.640 25+$12.480 50+$10.300 100+$9.590 More Pricing...	Single	N Channel	34A	1.2kV	53mohm	TO-247	3Pins	12V	6V	263W	175°C	-
UF4C120053K4S	78AK8904 Data Sheet RoHS	ONSEMI SILICON CARBIDE MOSFET SINGLE	Each	1+$17.100 10+$14.890 25+$12.700 50+$10.490 100+$9.770 More Pricing...	Single	N Channel	34A	1.2kV	53mohm	TO-247	4Pins	12V	6V	263W	175°C	-
NVHL023N065M3S	20AM4400 Data Sheet RoHS	ONSEMI SIC MOSFET N-CH 650V 70A TO-247	Each	1+$21.280 10+$16.170 25+$15.420 50+$14.680 100+$13.930 More Pricing...	Single	N Channel	70A	650V	33mohm	TO-247	3Pins	18V	4V	263W	175°C	EliteSiC Series
IMT65R039M1HXUMA1	79AK2194 RoHS	INFINEON Silicon Carbide MOSFET N Channel 61 A 650 V 0.039 ohm HSOF	Each (Supplied on Cut Tape) Cut Tape	1+$11.020 50+$7.580 100+$5.790 250+$5.670 500+$5.550 More Pricing...	-	N Channel	61A	650V	0.039ohm	HSOF	8Pins	18V	5.7V	263W	175°C	CoolSiC Trench Series
IMBG65R026M2HXTMA1	22AM1428 RoHS	INFINEON SIC MOSFET N-CH 650V 68A TO-263	Each (Supplied on Cut Tape) Cut Tape	1+$17.490 50+$13.090 100+$11.240 250+$11.010 500+$10.790 More Pricing...	Single	N Channel	68A	650V	0.024ohm	TO-263 (D2PAK)	7Pins	20V	5.6V	263W	175°C	CoolSiC Gen 2 Series
NVBG023N065M3S	20AM7295 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 70 A 650 V 33 mohm TO-263HV (D2PAK)	Each (Supplied on Cut Tape) Cut Tape	1+$20.670 50+$15.680 100+$13.860 250+$13.590 500+$13.310 More Pricing...	Single	N Channel	70A	650V	33mohm	TO-263HV (D2PAK)	7Pins	18V	4V	263W	175°C	EliteSiC Series