Silicon Carbide (SiC) MOSFETs & Modules | Newark Electronics Mexico

Manufacturer Part No	Order Code	Manufacturer / Description	Price for	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
MXP120A160SL-GE3	16AN4143 RoHS	VISHAY SIC MOSFET N-CH 1.2KV TO-247AD	Each	1+$6.330 10+$5.730 25+$5.240 50+$4.890 100+$4.580 More Pricing...	Single	N Channel	18A	1.2kV	0.2ohm	TO-247AD	4Pins	18V	3.1V	109W	175°C	MaxSiC Series
MXP120A045FL-GE3	26AM1586 Data Sheet RoHS	VISHAY Silicon Carbide MOSFET Single N Channel 49 A 1.2 kV 0.056 ohm TO-247AD	Each	1+$32.200 5+$28.940 10+$25.670 25+$24.800 50+$23.930 More Pricing...	Single	N Channel	49A	1.2kV	0.056ohm	TO-247AD	4Pins	20V	2.38V	227W	150°C	MaxSiC Series
MXP120A250FW-GE3	26AM1590 Data Sheet RoHS	VISHAY Silicon Carbide MOSFET Single N Channel 10.5 A 1.2 kV 0.313 ohm TO-247AD	Each	1+$8.890 10+$7.440 25+$7.070 50+$6.700 100+$6.330 More Pricing...	Single	N Channel	10.5A	1.2kV	0.313ohm	TO-247AD	3Pins	20V	3.1V	56W	150°C	MaxSiC Series
MXP120A080FL-GE3	26AM1588 Data Sheet RoHS	VISHAY Silicon Carbide MOSFET Single N Channel 29 A 1.2 kV 0.1 ohm TO-247AD	Each	1+$14.020 10+$13.320 25+$13.030 50+$12.060 100+$11.530 More Pricing...	Single	N Channel	29A	1.2kV	0.1ohm	TO-247AD	4Pins	20V	2.69V	139W	150°C	MaxSiC Series
MXP120A045FW-GE3	26AM1587 Data Sheet RoHS	VISHAY Silicon Carbide MOSFET Single N Channel 49 A 1.2 kV 0.056 ohm TO-247AD	Each	1+$31.280 5+$28.110 10+$24.930 25+$24.080 50+$23.250 More Pricing...	Single	N Channel	49A	1.2kV	0.056ohm	TO-247AD	3Pins	20V	2.38V	227W	150°C	MaxSiC Series
MXP120A250FL-GE3	26AM1589 Data Sheet RoHS	VISHAY Silicon Carbide MOSFET Single N Channel 10.5 A 1.2 kV 0.313 ohm TO-247AD	Each	1+$11.020 10+$8.360 25+$8.000 50+$7.650 100+$7.290 More Pricing...	Single	N Channel	10.5A	1.2kV	0.313ohm	TO-247AD	4Pins	20V	3.1V	56W	150°C	MaxSiC Series