Semiconductors - Discretes | Newark Electronics Mexico

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More Semiconductors - Discretes (175)

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Semiconductor Assortments (18)

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Wide Band Gap Devices (1,893)

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New Semiconductors - Discretes

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

NEXPERIA

New onsemi 650v SiC MOSFETs

New onsemi 650v SiC MOSFETs

ONSEMI

MAT14ARZ Bipolar Transistor Array

MAT14ARZ Bipolar Transistor Array

ANALOG DEVICES

TK095N65Z5 650V N-channel power MOSFETs

TK095N65Z5 650V N-channel power MOSFETs

TOSHIBA

600V Gallium Nitride Transistor

600V Gallium Nitride (GaN) Transistor

INFINEON

600 V, 30 A Trench field-stop IGBT

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

NEXPERIA

XPT series IGBT Thin-wafer Technolog

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications.

LITTELFUSE

MPS Series SiC Schottky Diodes

GENESIC SEMICONDUCTOR

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

N-Channel Power MOSFET

N-Channel Power MOSFET

INFINEON

650 V, Gallium Nitride (GaN) FET

650 V, Gallium Nitride (GaN) FET

NEXPERIA

H-Bridge in APM16 Series

H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter

ONSEMI

Silicon-carbide (SiC) N-Channel Power MOSFET

Silicon-carbide (SiC) N-Channel Power MOSFET

MICROCHIP

SIC Mosfet Module, 900V, 149A

SIC Mosfet Module, 900V, 149A

ONSEMI

onsemi EliteSiC

onsemi EliteSiC - 650V to 1700V - Now in stock

ONSEMI

High Speed Trr Series

Low Noise PrestoMOS™ - High Speed Trr Series

ROHM

IGBT 650V Field Stop Trench Technology

IGBT 650V Field Stop Trench Technology

ONSEMI

All On Board

All on Board

Your destination for on-board components

TOSHIBA

Toshiba has launched a new 1350V IGBT for "soft swiching" applications

Toshiba has launched a new 1350V IGBT for "soft swiching" applications

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