Print Page
FF650R17IE4DB2BOSA1
IGBT Module, Dual, 930 A, 2.45 V, 4.15 kW, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoFF650R17IE4DB2BOSA1
Newark Part No.84R7187
Product RangePrimePACK 2 Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 1+ | $549.570 |
Price for:Each
Minimum: 1
Multiple: 1
$549.57
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoFF650R17IE4DB2BOSA1
Newark Part No.84R7187
Product RangePrimePACK 2 Series
Technical Datasheet
IGBT ConfigurationDual
Transistor PolarityN Channel
DC Collector Current650A
Continuous Collector Current930A
Collector Emitter Saturation Voltage2.45V
Collector Emitter Saturation Voltage Vce(on)1.7kV
Power Dissipation Pd4.15kW
Power Dissipation4.15kW
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.7kV
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins10Pins
Collector Emitter Voltage Max1.7kV
IGBT TechnologyIGBT 4
Transistor MountingPanel
Product RangePrimePACK 2 Series
SVHCNo SVHC (21-Jan-2025)
Product Overview
FF650R17IE4DB2BOSA1 is a Prime PACK™2 module and NTC. Applications include 3-level-applications, auxiliary inverters, high power converters, motor drives, traction drives, wind turbines.
- Extended operation temperature Tvj op, high DC stability
- High current density, low switching losses
- Enlarged diode for regenerative operation, low VCEsat
- High creepage and clearance distances
- High power and thermal cycling capability
- High power density, copper base plate
- 930A continuous DC collector current (TC = 25°C, Tvj max = 175°C)
- 5.8V typical gate threshold voltage (IC = 24,0mA, VCE = VGE, Tvj = 25°C)
- 2.3ohm typical internal gate resistor (Tvj = 25°C)
- Temperature range from -40 to +150°C (under switching conditions)
Technical Specifications
IGBT Configuration
Dual
DC Collector Current
650A
Collector Emitter Saturation Voltage
2.45V
Power Dissipation Pd
4.15kW
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
IGBT Termination
Tab
Collector Emitter Voltage Max
1.7kV
Transistor Mounting
Panel
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Collector Current
930A
Collector Emitter Saturation Voltage Vce(on)
1.7kV
Power Dissipation
4.15kW
Collector Emitter Voltage V(br)ceo
1.7kV
Transistor Case Style
Module
No. of Pins
10Pins
IGBT Technology
IGBT 4
Product Range
PrimePACK 2 Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability