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IMBG65R075M2HXTMA1
MOSFET, N-CH, 650V, 74A, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMBG65R075M2HXTMA1Copy
Newark Part No.59AM2290
Product RangeCoolSiC G2 Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 52 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 1+ | $8.510 |
| 10+ | $7.510 |
| 25+ | $6.880 |
| 50+ | $6.220 |
| 100+ | $5.410 |
| 250+ | $4.280 |
| 500+ | $4.060 |
| 1000+ | $3.830 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$8.51
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG65R075M2HXTMA1Copy
Newark Part No.59AM2290
Product RangeCoolSiC G2 Series
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id28A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.095ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation124W
Operating Temperature Max175°C
Product RangeCoolSiC G2 Series
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
28A
Drain Source On State Resistance
0.095ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
124W
Product Range
CoolSiC G2 Series
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate