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IMCQ120R007M2HXTMA1
SIC MOSFET, N-CH, 1.2KV, 257A, HDSOP
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMCQ120R007M2HXTMA1Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.
Re-Reel46AM5645RL
Cut Tape46AM5645
Product RangeCoolSiC G2 Series
Your Part Number
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $41.650 | $41.65 |
| Total Price | $41.65 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $41.650 |
| 50+ | $32.620 |
| 100+ | $31.730 |
| 250+ | $31.090 |
| 500+ | $30.450 |
| 1000+ | $29.820 |
| 2500+ | $29.190 |
| 5000+ | $28.560 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIMCQ120R007M2HXTMA1Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.
Re-Reel46AM5645RL
Cut Tape46AM5645
Product RangeCoolSiC G2 Series
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id257A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance7500µohm
Transistor Case StyleHDSOP
No. of Pins22Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.1V
Power Dissipation1.172kW
Operating Temperature Max175°C
Product RangeCoolSiC G2 Series
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
257A
Drain Source On State Resistance
7500µohm
No. of Pins
22Pins
Gate Source Threshold Voltage Max
5.1V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
HDSOP
Rds(on) Test Voltage
18V
Power Dissipation
1.172kW
Product Range
CoolSiC G2 Series
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate