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IMYH200R012M1HXKSA1
Silicon Carbide MOSFET, Single, N Channel, 123 A, 2 kV, 0.0165 ohm, TO-247 Plus
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ManufacturerINFINEON
Manufacturer Part NoIMYH200R012M1HXKSA1
Newark Part No.86AK9961
Product RangeCoolSiC Series
Your Part Number
942 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $73.640 |
| 5+ | $70.430 |
| 10+ | $67.200 |
Price for:Each
Minimum: 1
Multiple: 1
$73.64
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMYH200R012M1HXKSA1
Newark Part No.86AK9961
Product RangeCoolSiC Series
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id123A
Drain Source Voltage Vds2kV
Drain Source On State Resistance0.0165ohm
Transistor Case StyleTO-247 Plus
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.5V
Power Dissipation552W
Operating Temperature Max175°C
Product RangeCoolSiC Series
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
123A
Drain Source On State Resistance
0.0165ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
5.5V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
2kV
Transistor Case Style
TO-247 Plus
Rds(on) Test Voltage
18V
Power Dissipation
552W
Product Range
CoolSiC Series
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate