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IRFL024NTRPBF
Power MOSFET, N Channel, 55 V, 2.8 A, 0.075 ohm, SOT-223, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRFL024NTRPBFCopy
Newark Part No.42Y0375
Product RangeHEXFET Series
Your Part Number
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFL024NTRPBFCopy
Newark Part No.42Y0375
Product RangeHEXFET Series
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id2.8A
On Resistance Rds(on)0.075ohm
Drain Source On State Resistance0.075ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd1W
Power Dissipation1W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
SVHCTo Be Advised
Product Overview
- Single N-channel HEXFET® power MOSFET
- Advanced process technology
- Fast switching
- Fully avalanche rated
- Ultra low on-resistance
- Dynamic dv/dt rating
- Product qualification according to JEDEC standard
- Planar cell structure for wide SOA
- Capable of being wave-soldered
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.075ohm
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation Pd
1W
No. of Pins
3Pins
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2.8A
Drain Source On State Resistance
0.075ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate