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NSF060120D7A0-QJ
SILICON CARBIDE, SIC, MOSFETS - MODULES
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800 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $13.610 |
| 10+ | $12.520 |
| 25+ | $12.030 |
| 50+ | $11.130 |
| 100+ | $10.440 |
| 250+ | $9.680 |
| 500+ | $9.350 |
| 1600+ | $8.960 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$13.61
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNSF060120D7A0-QJ
Newark Part No.44AM4348
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id38A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.09ohm
Transistor Case StyleTO-263
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.9V
Power Dissipation183W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
38A
Drain Source On State Resistance
0.09ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.9V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263
Rds(on) Test Voltage
18V
Power Dissipation
183W
Product Range
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability