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Product Information
ManufacturerONSEMI
Manufacturer Part NoNDT2955
Newark Part No.58K9483
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.5A
On Resistance Rds(on)0.095ohm
Drain Source On State Resistance0.095ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd3W
Transistor Case StyleSOT-223
Gate Source Threshold Voltage Max2.6V
Power Dissipation3W
No. of Pins4Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCLead
Product Overview
The NDT2955 is a surface mount, 60V P channel enhancement mode field effect transistors in SOT-223 package. Transistor is produced using high voltage trench process and suitable for power management applications.
- High density cell design for extremely low Rds(ON)
- Drain to source voltage (Vds) of -60V
- Gate to source voltage of ±20V
- Continuous drain current (Id) of -2.5A
- Power dissipation (pd) of 3W
- Low on state resistance of 163mohm at Vgs -4.5V
- Operating temperature range from -55°C to 150°C
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.095ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3W
Gate Source Threshold Voltage Max
2.6V
No. of Pins
4Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
2.5A
Drain Source On State Resistance
0.095ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-223
Power Dissipation
3W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability