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NTR4101PT1G
Power MOSFET, P Channel, 20 V, 3.2 A, 85 mohm, SOT-23, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTR4101PT1G
Newark Part No.10P1661
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.2A
On Resistance Rds(on)0.07ohm
Drain Source On State Resistance85mohm
Transistor MountingSurface Mount
Power Dissipation Pd730mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max720mV
Transistor Case StyleSOT-23
Power Dissipation730mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Alternatives for NTR4101PT1G
3 Products Found
Product Overview
The NTR4101PT1G is a P-channel Trench Power MOSFET offers -20V drain source voltage and -2.4A continuous drain current. It is suitable for charging circuits and battery protection, load management for portables and computing applications.
- Leading -20V Trench for low RDS (ON)
- -1.8V Rated for low voltage gate drive
- Surface-mount for small footprint
- Halogen-free
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Computers & Computer Peripherals, Portable Devices, Industrial
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.07ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
3.2A
Drain Source On State Resistance
85mohm
Power Dissipation Pd
730mW
Gate Source Threshold Voltage Max
720mV
Power Dissipation
730mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability