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NVBG022N120M3S-IE
SIC MOSFET, N-CH, 100A, 1.2KV, D2PAK-7
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVBG022N120M3S-IECopy
Manufacturer Standard Lead Time4 weeks
Newark Part No.11AN7162
Product RangeEliteSiC Series
Your Part Number
800 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $30.100 |
| 50+ | $21.940 |
| 100+ | $21.120 |
| 250+ | $20.690 |
| 500+ | $20.270 |
| 1000+ | $19.840 |
| 2500+ | $19.430 |
| 5000+ | $19.010 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$30.10
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG022N120M3S-IECopy
Manufacturer Standard Lead Time4 weeks
Newark Part No.11AN7162
Product RangeEliteSiC Series
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id100A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.022ohm
Transistor Case StyleD2PAK
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.72V
Power Dissipation441W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.022ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.72V
Operating Temperature Max
175°C
SVHC
No SVHC (04-Feb-2026)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
D2PAK
Rds(on) Test Voltage
18V
Power Dissipation
441W
Product Range
EliteSiC Series
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate