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NVBG030N120M3S
Silicon Carbide MOSFET, Single, N Channel, 77 A, 1.2 kV, 0.029 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVBG030N120M3SCopy
Manufacturer Standard Lead Time10 weeks
Newark Part No.80AK5050
Product RangeEliteSiC Series
Your Part Number
1,572 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $27.520 |
| 10+ | $20.270 |
| 25+ | $20.190 |
| 50+ | $20.100 |
| 100+ | $20.030 |
| 250+ | $19.940 |
| 500+ | $19.870 |
| 1600+ | $18.930 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$27.52
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG030N120M3SCopy
Manufacturer Standard Lead Time10 weeks
Newark Part No.80AK5050
Product RangeEliteSiC Series
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id77A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.029ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation348W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
77A
Drain Source On State Resistance
0.029ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
348W
Product Range
EliteSiC Series
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate