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NVBG070N120M3S
Silicon Carbide MOSFET, Single, N Channel, 36 A, 1.2 kV, 0.065 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVBG070N120M3S
Newark Part No.80AK5052
Product RangeEliteSiC Series
200 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $21.480 |
| 10+ | $17.010 |
| 25+ | $16.550 |
| 50+ | $16.100 |
| 100+ | $15.650 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$21.48
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG070N120M3S
Newark Part No.80AK5052
Product RangeEliteSiC Series
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id36A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.065ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation172W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
36A
Drain Source On State Resistance
0.065ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
175°C
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
172W
Product Range
EliteSiC Series
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate