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RD3N06BATTL1
MOSFET, P-CHANNEL, 80V, 60A, TO-252
Image is for illustrative purposes only. Please refer to product description.
ManufacturerROHM
Manufacturer Part NoRD3N06BATTL1Copy
Manufacturer Standard Lead Time22 weeks
Newark Part No.
Re-Reel22AM1032RL
Cut Tape22AM1032
Your Part Number
90 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.200 | $3.20 |
| Total Price | $3.20 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.200 |
| 50+ | $1.620 |
| 100+ | $1.460 |
| 250+ | $1.330 |
| 500+ | $1.200 |
| 1000+ | $1.180 |
| 2500+ | $1.150 |
| 5000+ | $1.130 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoRD3N06BATTL1Copy
Manufacturer Standard Lead Time22 weeks
Newark Part No.
Re-Reel22AM1032RL
Cut Tape22AM1032
Channel TypeP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id60A
Drain Source On State Resistance0.026ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation101W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
60A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
101W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate