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SCT018W65G3-4AG
Silicon Carbide MOSFET, Single, N Channel, 55 A, 650 V, 0.027 ohm, HiP247
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| Quantity | Price |
|---|---|
| 1+ | $29.560 |
| 5+ | $27.270 |
| 10+ | $26.620 |
Price for:Each
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Multiple: 1
$29.56
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT018W65G3-4AG
Newark Part No.12AM9882
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id55A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.027ohm
Transistor Case StyleHiP247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation398W
Operating Temperature Max200°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
55A
Drain Source On State Resistance
0.027ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
200°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
HiP247
Rds(on) Test Voltage
18V
Power Dissipation
398W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate